HFS5N70S Todos los transistores

 

HFS5N70S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS5N70S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 33 W

Tensión drenaje-fuente (Vds): 700 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 10.5 nC

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 3.2 Ohm

Empaquetado / Estuche: TO-220F

Búsqueda de reemplazo de MOSFET HFS5N70S

 

HFS5N70S Datasheet (PDF)

1.1. hfs5n70s.pdf Size:163K _update_mosfet

HFS5N70S
HFS5N70S

Aug 2012 BVDSS = 700 V RDS(on) typ HFS5N70S ID = 4.0 A 700V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

5.1. hfs5n50u.pdf Size:312K _update_mosfet

HFS5N70S
HFS5N70S

May 2012 BVDSS = 500 V RDS(on) typ HFS5N50U ID = 5.0 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area L

5.2. hfs5n50s.pdf Size:194K _update_mosfet

HFS5N70S
HFS5N70S

OCT 2008 BVDSS = 500 V RDS(on) typ HFS5N50S ID = 5.0 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower R

 5.3. hfs5n60u.pdf Size:311K _update_mosfet

HFS5N70S
HFS5N70S

May 2012 BVDSS = 600 V RDS(on) typ HFS5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

5.4. hfs5n60s.pdf Size:202K _update_mosfet

HFS5N70S
HFS5N70S

Aug 2007 BVDSS = 600 V RDS(on) typ = 2.0 HFS5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

 5.5. hfs5n65u.pdf Size:315K _update_mosfet

HFS5N70S
HFS5N70S

March 2013 BVDSS = 650 V RDS(on) typ HFS5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

5.6. hfs5n65s.pdf Size:202K _update_mosfet

HFS5N70S
HFS5N70S

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

5.7. hfs5n80.pdf Size:202K _update_mosfet

HFS5N70S
HFS5N70S

May 2013 BVDSS = 800 V RDS(on) typ HFS5N80 ID = 5.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


HFS5N70S
  HFS5N70S
  HFS5N70S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top