HFS5N70S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HFS5N70S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2
Ohm
Package:
TO-220F
HFS5N70S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFS5N70S
Datasheet (PDF)
..1. Size:163K semihow
hfs5n70s.pdf 
Aug 2012BVDSS = 700 VRDS(on) typ HFS5N70SID = 4.0 A700V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
9.1. Size:198K semihow
hfs5n50s.pdf
OCT 2008BVDSS = 500 VRDS(on) typ HFS5N50S ID = 5.0 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area
9.2. Size:792K semihow
hfs5n65sa.pdf
Dec. 2021BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SAID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14.2 nC (Typ.) Extended Safe Op
9.3. Size:194K semihow
hfs5n50u.pdf
May 2012BVDSS = 500 VRDS(on) typ HFS5N50U ID = 5.0 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area L
9.4. Size:193K semihow
hfs5n60u.pdf
May 2012BVDSS = 600 VRDS(on) typ HFS5N60UID = 4.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
9.5. Size:408K semihow
hfp5n60f hfs5n60f.pdf
Oct 2016HFP5N60F / HFS5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFP5N60F HFS5N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unle
9.6. Size:598K semihow
hfs5n65js.pdf
Mar. 2023HFS5N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.0 A Excellent Switching CharacteristicsRDS(on), Typ 2.26 100% Avalanche TestedQg, Typ 12.7 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum
9.7. Size:202K semihow
hfs5n80.pdf
May 2013BVDSS = 800 VRDS(on) typ HFS5N80ID = 5.0 A800V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area
9.8. Size:315K semihow
hfs5n65u.pdf
March 2013BVDSS = 650 VRDS(on) typ HFS5N65U ID = 4.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
9.9. Size:202K semihow
hfs5n65s.pdf
Oct 2009BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )
9.10. Size:167K semihow
hfs5n60s.pdf
Aug 2007BVDSS = 600 VRDS(on) typ HFS5N60SID = 4.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area
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