HFS8N60S Todos los transistores

 

HFS8N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS8N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220F
 

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HFS8N60S Datasheet (PDF)

 ..1. Size:180K  semihow
 hfs8n60s.pdf pdf_icon

HFS8N60S

Dec 2006BVDSS = 600 VRDS(on) typ HFS8N60SID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

 7.1. Size:660K  semihow
 hfs8n60ua.pdf pdf_icon

HFS8N60S

July 2021BVDSS = 600 VRDS(on) typ = 0.96 HFS8N60UA ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe

 7.2. Size:308K  semihow
 hfs8n60u.pdf pdf_icon

HFS8N60S

August 2012BVDSS = 600 VRDS(on) typ HFS8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are

 8.1. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N60S

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFS6N70U , HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , K2611 , HFS8N60U , HFS8N65S , HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S .

History: TTD50P04AT

 

 
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