Справочник MOSFET. HFS8N60S

 

HFS8N60S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFS8N60S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для HFS8N60S

 

 

HFS8N60S Datasheet (PDF)

 ..1. Size:180K  semihow
 hfs8n60s.pdf

HFS8N60S HFS8N60S

Dec 2006BVDSS = 600 VRDS(on) typ HFS8N60SID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

 7.1. Size:660K  semihow
 hfs8n60ua.pdf

HFS8N60S HFS8N60S

July 2021BVDSS = 600 VRDS(on) typ = 0.96 HFS8N60UA ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe

 7.2. Size:308K  semihow
 hfs8n60u.pdf

HFS8N60S HFS8N60S

August 2012BVDSS = 600 VRDS(on) typ HFS8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are

 8.1. Size:307K  semihow
 hfs8n65u.pdf

HFS8N60S HFS8N60S

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 8.2. Size:249K  semihow
 hfs8n65s.pdf

HFS8N60S HFS8N60S

Sep 2009BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E

 8.3. Size:736K  semihow
 hfs8n65sa.pdf

HFS8N60S HFS8N60S

August 2022BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SAID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 21 nC (Typ.) Extended Safe O

 8.4. Size:596K  semihow
 hfs8n65js.pdf

HFS8N60S HFS8N60S

Mar. 2023HFS8N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 7.2 A Excellent Switching CharacteristicsRDS(on), Typ 1.04 100% Avalanche TestedQg, Typ 25.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

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