Справочник MOSFET. HFS8N60S

 

HFS8N60S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HFS8N60S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

HFS8N60S Datasheet (PDF)

 ..1. Size:180K  semihow
 hfs8n60s.pdf pdf_icon

HFS8N60S

Dec 2006BVDSS = 600 VRDS(on) typ HFS8N60SID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

 7.1. Size:660K  semihow
 hfs8n60ua.pdf pdf_icon

HFS8N60S

July 2021BVDSS = 600 VRDS(on) typ = 0.96 HFS8N60UA ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe

 7.2. Size:308K  semihow
 hfs8n60u.pdf pdf_icon

HFS8N60S

August 2012BVDSS = 600 VRDS(on) typ HFS8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are

 8.1. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N60S

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

ПОКАЗАТЬ ЕЩЁ

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History: HFS8N60UA

 

 
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