HFS8N60U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS8N60U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 48 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 7.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4.5 V
Carga de compuerta (Qg): 22 nC
Tiempo de elevación (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia drenaje-fuente RDS(on): 1.2 Ohm
Empaquetado / Estuche: TO-220F
Búsqueda de reemplazo de MOSFET HFS8N60U
HFS8N60U Datasheet (PDF)
1.1. hfs8n60u.pdf 
Size:308K _update_mosfet
August 2012 BVDSS = 600 V RDS(on) typ HFS8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are
3.1. hfs8n60s.pdf Size:180K _update_mosfet
Dec 2006 BVDSS = 600 V RDS(on) typ HFS8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS
4.1. hfs8n65u.pdf Size:307K _update_mosfet
March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area
4.2. hfs8n65s.pdf Size:249K _update_mosfet
Sep 2009 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
