All MOSFET. HFS8N60U Datasheet

 

HFS8N60U Datasheet and Replacement


   Type Designator: HFS8N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220F
 

 HFS8N60U substitution

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HFS8N60U Datasheet (PDF)

 ..1. Size:308K  semihow
 hfs8n60u.pdf pdf_icon

HFS8N60U

August 2012BVDSS = 600 VRDS(on) typ HFS8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Are

 0.1. Size:660K  semihow
 hfs8n60ua.pdf pdf_icon

HFS8N60U

July 2021BVDSS = 600 VRDS(on) typ = 0.96 HFS8N60UA ID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe

 7.1. Size:180K  semihow
 hfs8n60s.pdf pdf_icon

HFS8N60U

Dec 2006BVDSS = 600 VRDS(on) typ HFS8N60SID = 7.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS

 8.1. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N60U

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

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Datasheet: HFS6N90 , HFS730 , HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , EMB04N03H , HFS8N65S , HFS8N65U , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S , HFU630 .

History: APT17F100S

Keywords - HFS8N60U MOSFET datasheet

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