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HFS8N65U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS8N65U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-220F
 

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HFS8N65U Datasheet (PDF)

 ..1. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N65U

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 7.1. Size:249K  semihow
 hfs8n65s.pdf pdf_icon

HFS8N65U

Sep 2009BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E

 7.2. Size:736K  semihow
 hfs8n65sa.pdf pdf_icon

HFS8N65U

August 2022BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SAID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 21 nC (Typ.) Extended Safe O

 7.3. Size:596K  semihow
 hfs8n65js.pdf pdf_icon

HFS8N65U

Mar. 2023HFS8N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 7.2 A Excellent Switching CharacteristicsRDS(on), Typ 1.04 100% Avalanche TestedQg, Typ 25.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

MOSTRAR MÁS

Otros transistores... HFS730U , HFS740 , HFS7N80 , HFS830 , HFS840 , HFS8N60S , HFS8N60U , HFS8N65S , 2N7002 , HFS8N70S , HFS8N70U , HFS8N80 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S , HFW11N40 .

History: IPP530N15N3 | 2SK971 | AP9918J | DMN2004VK | AOCR35101E | RTQ025P02 | IPI029N06N

 

 
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