HFW5N50S Todos los transistores

 

HFW5N50S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFW5N50S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: D2-PAK
 

 Búsqueda de reemplazo de HFW5N50S MOSFET

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Principales características: HFW5N50S

 ..1. Size:204K  semihow
 hfw5n50s hfi5n50s.pdf pdf_icon

HFW5N50S

June 2009 BVDSS = 500 V RDS(on) typ = 1.2 HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N50S HFI5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Extended Saf

 ..2. Size:204K  semihow
 hfw5n50s.pdf pdf_icon

HFW5N50S

June 2009 BVDSS = 500 V RDS(on) typ = 1.2 HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N50S HFI5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Extended Saf

 9.1. Size:175K  semihow
 hfw5n60s.pdf pdf_icon

HFW5N50S

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf

 9.2. Size:683K  semihow
 hfw5n65u.pdf pdf_icon

HFW5N50S

Jan 2013 BVDSS = 650 V RDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology HFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Exte

MOSTRAR MÁS

Otros transistores... HFS8N80 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S , HFW11N40 , HFW12N60S , HFW50N06 , 20N60 , HFW5N60S , HFW5N65S , HFW5N65U , HFW640 , HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 .

 

 
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