HFW5N50S MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

HFW5N50S Specs and Replacement

Type Designator: HFW5N50S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 86 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: D2-PAK

HFW5N50S substitution

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HFW5N50S datasheet

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June 2009 BVDSS = 500 V RDS(on) typ = 1.2 HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N50S HFI5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Extended Saf... See More ⇒

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hfw5n60s.pdf pdf_icon

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf... See More ⇒

9.2. Size:683K semihow
hfw5n65u.pdf pdf_icon

Jan 2013 BVDSS = 650 V RDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology HFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Exte... See More ⇒