All MOSFET. HFW5N50S Datasheet

 

HFW5N50S Datasheet and Replacement


   Type Designator: HFW5N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: D2-PAK
 

 HFW5N50S substitution

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HFW5N50S Datasheet (PDF)

 ..1. Size:204K  semihow
 hfw5n50s hfi5n50s.pdf pdf_icon

HFW5N50S

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

 ..2. Size:204K  semihow
 hfw5n50s.pdf pdf_icon

HFW5N50S

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

 9.1. Size:175K  semihow
 hfw5n60s.pdf pdf_icon

HFW5N50S

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

 9.2. Size:683K  semihow
 hfw5n65u.pdf pdf_icon

HFW5N50S

Jan 2013BVDSS = 650 VRDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New Design Superior Avalanche Rugged TechnologyHFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Exte

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Datasheet: HFS8N80 , HFS9N50 , HFT1N60S , HFU630 , HFW10N60S , HFW11N40 , HFW12N60S , HFW50N06 , 20N60 , HFW5N60S , HFW5N65S , HFW5N65U , HFW640 , HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 .

History: NDD05N50Z

Keywords - HFW5N50S MOSFET datasheet

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