HFW5N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HFW5N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: D2-PAK

Búsqueda de reemplazo de MOSFET HFW5N60S

HFW5N60S Datasheet (PDF)

..1. Size:175K semihow
hfw5n60s.pdf

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

..2. Size:175K semihow
hfw5n60s hfi5n60s.pdf

8.1. Size:683K semihow
hfw5n65u.pdf

Jan 2013BVDSS = 650 VRDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New Design Superior Avalanche Rugged TechnologyHFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Exte

8.2. Size:174K semihow
hfw5n65s.pdf

Mar 2010BVDSS = 650 VRDS(on) typ HFW5N65S / HFI5N65SID = 4.2 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N65S HFI5N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

9.1. Size:204K semihow
hfw5n50s hfi5n50s.pdf

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

9.2. Size:204K semihow
hfw5n50s.pdf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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