HFW5N60S Todos los transistores

 

HFW5N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFW5N60S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 10.5 nC

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 2.5 Ohm

Empaquetado / Estuche: D2-PAK

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HFW5N60S Datasheet (PDF)

1.1. hfw5n60s.pdf Size:175K _update_mosfet

HFW5N60S
HFW5N60S

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

4.1. hfw5n65u.pdf Size:683K _update_mosfet

HFW5N60S
HFW5N60S

Jan 2013 BVDSS = 650 V RDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology HFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Exte

4.2. hfw5n65s.pdf Size:174K _update_mosfet

HFW5N60S
HFW5N60S

Mar 2010 BVDSS = 650 V RDS(on) typ HFW5N65S / HFI5N65S ID = 4.2 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N65S HFI5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

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