HFW5N60S PDF and Equivalents Search

 

HFW5N60S Specs and Replacement


   Type Designator: HFW5N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: D2-PAK
 

 HFW5N60S substitution

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HFW5N60S datasheet

 ..1. Size:175K  semihow
 hfw5n60s.pdf pdf_icon

HFW5N60S

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf... See More ⇒

 ..2. Size:175K  semihow
 hfw5n60s hfi5n60s.pdf pdf_icon

HFW5N60S

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf... See More ⇒

 8.1. Size:683K  semihow
 hfw5n65u.pdf pdf_icon

HFW5N60S

Jan 2013 BVDSS = 650 V RDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology HFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Exte... See More ⇒

 8.2. Size:174K  semihow
 hfw5n65s.pdf pdf_icon

HFW5N60S

Mar 2010 BVDSS = 650 V RDS(on) typ HFW5N65S / HFI5N65S ID = 4.2 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N65S HFI5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf... See More ⇒

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Detailed specifications: HFS9N50 , HFT1N60S , HFU630 , HFW10N60S , HFW11N40 , HFW12N60S , HFW50N06 , HFW5N50S , IRF540N , HFW5N65S , HFW5N65U , HFW640 , HFW6N90 , HFW8N65U , HFW9N50 , HP8KA1 , HRD13N10K .

History: FQP10N50CF

Keywords - HFW5N60S MOSFET specs

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