HUF75345S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75345S3ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 325 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 118 nS
Cossⓘ - Capacitancia de salida: 1450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO-263AB
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HUF75345S3ST Datasheet (PDF)
huf75345g3 huf75345p3 huf75345s3s huf75345s3 huf75345s3st.pdf

HUF75345G3, HUF75345P3, HUF75345S3SData Sheet December 200975A, 55V, 0.007 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models
huf75345s3st.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor HUF75345S3STDESCRIPTIONDrain Current: I = 75A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM
huf75345g3 huf75345p3 huf75345s3s.pdf

MOSFET Power, N-Channel,UltraFET55 V, 75 A, 7 mWHUF75345G3, HUF75345P3,HUF75345S3Swww.onsemi.comDescriptionThese N-Channel power MOSFETs are manufactured usingVDSS RDS(ON) MAX ID MAXthe innovative UltraFET process. This advanced process technology55 V 7 mW 75 Aachieves the lowest possible on-resistance per silicon area, resultingin outstanding performance. This devic
huf75344a3.pdf

October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan
Otros transistores... HTMN5130SSD , HUF75329D3ST , HUF75332S3ST , HUF75337S3 , HUF75343S3 , HUF75343S3ST , HUF75344A3 , HUF75345S3 , AON7408 , HUF75531SK8T , HUF75545S3 , HUF75545S3ST , HUF75617D3 , HUF75617D3S , HUF75617D3ST , HUF75623S3ST , HUF75631S3ST .
History: CJAC10H02 | FCHD125N65S3R0 | IRFZ44NLPBF | 60N06 | CJAC100P03 | FXN10N80F | CM8N60
History: CJAC10H02 | FCHD125N65S3R0 | IRFZ44NLPBF | 60N06 | CJAC100P03 | FXN10N80F | CM8N60



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