HUF75345S3ST Datasheet and Replacement
Type Designator: HUF75345S3ST
Marking Code: 75345S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 325 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 220 nC
tr ⓘ - Rise Time: 118 nS
Cossⓘ - Output Capacitance: 1450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-263AB
HUF75345S3ST Datasheet (PDF)
huf75345g3 huf75345p3 huf75345s3s huf75345s3 huf75345s3st.pdf
HUF75345G3, HUF75345P3, HUF75345S3SData Sheet December 200975A, 55V, 0.007 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models
huf75345s3st.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor HUF75345S3STDESCRIPTIONDrain Current: I = 75A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM
huf75345g3 huf75345p3 huf75345s3s.pdf
MOSFET Power, N-Channel,UltraFET55 V, 75 A, 7 mWHUF75345G3, HUF75345P3,HUF75345S3Swww.onsemi.comDescriptionThese N-Channel power MOSFETs are manufactured usingVDSS RDS(ON) MAX ID MAXthe innovative UltraFET process. This advanced process technology55 V 7 mW 75 Aachieves the lowest possible on-resistance per silicon area, resultingin outstanding performance. This devic
huf75344a3.pdf
October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan
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