HUF75531SK8T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75531SK8T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 385 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: MS-012AA

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HUF75531SK8T datasheet

 ..1. Size:238K  fairchild semi
 huf75531sk8t.pdf pdf_icon

HUF75531SK8T

HUF75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.030 , VGS = 10V Simulation Models 5 - Temperature Compensated PSPICE and SABER 1 Electrical Models 2 3 - Spice and SABER Thermal Impedance Models 4 - www.fairchildsemi.com Peak Curren

 8.1. Size:270K  fairchild semi
 huf75545p3 huf75545s3 huf75545s3s.pdf pdf_icon

HUF75531SK8T

HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANG

 8.2. Size:267K  fairchild semi
 huf75545s3 huf75545s3st.pdf pdf_icon

HUF75531SK8T

HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANG

 8.3. Size:192K  fairchild semi
 huf75542p3-s3s.pdf pdf_icon

HUF75531SK8T

HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.014 , VGS = 10V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Model

MOSTRAR MÁS

Otros transistores... HUF75329D3ST, HUF75332S3ST, HUF75337S3, HUF75343S3, HUF75343S3ST, HUF75344A3, HUF75345S3, HUF75345S3ST, IRF630, HUF75545S3, HUF75545S3ST, HUF75617D3, HUF75617D3S, HUF75617D3ST, HUF75623S3ST, HUF75631S3ST, HUF75631SK8T