HUF75531SK8T Specs and Replacement
Type Designator: HUF75531SK8T
Marking Code: 75531SK8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 68 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 385 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: MS-012AA
HUF75531SK8T substitution
- MOSFET ⓘ Cross-Reference Search
HUF75531SK8T datasheet
huf75531sk8t.pdf
HUF75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.030 , VGS = 10V Simulation Models 5 - Temperature Compensated PSPICE and SABER 1 Electrical Models 2 3 - Spice and SABER Thermal Impedance Models 4 - www.fairchildsemi.com Peak Curren... See More ⇒
huf75545p3 huf75545s3 huf75545s3s.pdf
HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANG... See More ⇒
huf75545s3 huf75545s3st.pdf
HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANG... See More ⇒
huf75542p3-s3s.pdf
HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.014 , VGS = 10V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Model... See More ⇒
Detailed specifications: HUF75329D3ST, HUF75332S3ST, HUF75337S3, HUF75343S3, HUF75343S3ST, HUF75344A3, HUF75345S3, HUF75345S3ST, IRF630, HUF75545S3, HUF75545S3ST, HUF75617D3, HUF75617D3S, HUF75617D3ST, HUF75623S3ST, HUF75631S3ST, HUF75631SK8T
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
