HUF75531SK8T MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75531SK8T
Marking Code: 75531SK8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 68 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 385 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: MS-012AA
HUF75531SK8T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75531SK8T Datasheet (PDF)
huf75531sk8t.pdf
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huf75542p3-s3s.pdf
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