HUF75531SK8T MOSFET. Datasheet pdf. Equivalent

   Type Designator: HUF75531SK8T
   Marking Code: 75531SK8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 385 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MS-012AA

HUF75531SK8T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS