HUF75631S3ST Todos los transistores

 

HUF75631S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75631S3ST

Código: 75631S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 33 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 66 nC

Tiempo de elevación (tr): 57 nS

Conductancia de drenaje-sustrato (Cd): 295 pF

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO-263AB

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HUF75631S3ST Datasheet (PDF)

1.1. huf75631sk8t.pdf Size:249K _update_mosfet

HUF75631S3ST
HUF75631S3ST

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

1.2. huf75631s3st.pdf Size:200K _update_mosfet

HUF75631S3ST
HUF75631S3ST

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.040Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice an

 1.3. huf75631sk8.pdf Size:254K _fairchild_semi

HUF75631S3ST
HUF75631S3ST

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

1.4. huf75631s3s.pdf Size:202K _fairchild_semi

HUF75631S3ST
HUF75631S3ST

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice and SABER Therm

Otros transistores... HUF75345S3ST , HUF75531SK8T , HUF75545S3 , HUF75545S3ST , HUF75617D3 , HUF75617D3S , HUF75617D3ST , HUF75623S3ST , 2SK3569 , HUF75631SK8T , HUF75637S3 , HUF75637S3ST , HUF75639S3ST , HUF75645S3ST , HUF75829D3 , HUF75829D3S , HUF75829D3ST .

 

 
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