HUF75639S3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75639S3ST

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO-263AB

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HUF75639S3ST datasheet

 ..1. Size:227K  fairchild semi
 huf75639s3st.pdf pdf_icon

HUF75639S3ST

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber T

 3.1. Size:229K  fairchild semi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3ST

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber T

 3.2. Size:720K  onsemi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3ST

MOSFET Power, N-Channel, Ultrafet 100 V, 56 A, 25 mW HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 www.onsemi.com These N-Channel power MOSFETs are manufactured using the innovative Ultrafet process. This advanced process technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high ener

 5.1. Size:230K  fairchild semi
 huf75639s f085a.pdf pdf_icon

HUF75639S3ST

HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Peak Current vs Pulse Width Curve are manufactured using the UIS Rating Curve innovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar

MOSTRAR MÁS

Otros transistores... HUF75617D3, HUF75617D3S, HUF75617D3ST, HUF75623S3ST, HUF75631S3ST, HUF75631SK8T, HUF75637S3, HUF75637S3ST, IRFP260, HUF75645S3ST, HUF75829D3, HUF75829D3S, HUF75829D3ST, HUF75831SK8T, HUF75842S3S, HUF75842S3ST, HUF75925D3ST