HUF75639S3ST Todos los transistores

 

HUF75639S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF75639S3ST
   Código: 75639S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-263AB
 

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HUF75639S3ST Datasheet (PDF)

 ..1. Size:227K  fairchild semi
 huf75639s3st.pdf pdf_icon

HUF75639S3ST

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 3.1. Size:229K  fairchild semi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3ST

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 3.2. Size:720K  onsemi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3ST

MOSFET Power, N-Channel,Ultrafet100 V, 56 A, 25 mWHUF75639G3, HUF75639P3,HUF75639S3S, HUF75639S3www.onsemi.comThese N-Channel power MOSFETs are manufactured using theinnovative Ultrafet process. This advanced process technologyachieves the lowest possible on- resistance per silicon area, resultingin outstanding performance. This device is capable of withstandinghigh ener

 5.1. Size:230K  fairchild semi
 huf75639s f085a.pdf pdf_icon

HUF75639S3ST

HUFA75639S3ST_F085AData Sheet March 201256A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Peak Current vs Pulse Width Curveare manufactured using the UIS Rating Curveinnovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar

MOSTRAR MÁS

Otros transistores... HUF75617D3 , HUF75617D3S , HUF75617D3ST , HUF75623S3ST , HUF75631S3ST , HUF75631SK8T , HUF75637S3 , HUF75637S3ST , 8205A , HUF75645S3ST , HUF75829D3 , HUF75829D3S , HUF75829D3ST , HUF75831SK8T , HUF75842S3S , HUF75842S3ST , HUF75925D3ST .

 

 
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