All MOSFET. HUF75639S3ST Datasheet

 

HUF75639S3ST Datasheet and Replacement


   Type Designator: HUF75639S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-263AB
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HUF75639S3ST Datasheet (PDF)

 ..1. Size:227K  fairchild semi
huf75639s3st.pdf pdf_icon

HUF75639S3ST

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 3.1. Size:229K  fairchild semi
huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3ST

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 3.2. Size:720K  onsemi
huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3ST

MOSFET Power, N-Channel,Ultrafet100 V, 56 A, 25 mWHUF75639G3, HUF75639P3,HUF75639S3S, HUF75639S3www.onsemi.comThese N-Channel power MOSFETs are manufactured using theinnovative Ultrafet process. This advanced process technologyachieves the lowest possible on- resistance per silicon area, resultingin outstanding performance. This device is capable of withstandinghigh ener

 5.1. Size:230K  fairchild semi
huf75639s f085a.pdf pdf_icon

HUF75639S3ST

HUFA75639S3ST_F085AData Sheet March 201256A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Peak Current vs Pulse Width Curveare manufactured using the UIS Rating Curveinnovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | DM12N65C | SPD04N60S5 | NTD4855N-1G | FCPF7N60YDTU | SM6A12NSFP

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