HUF75842S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75842S3ST
Código: 75842S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 43 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 144 nC
Tiempo de subida (tr): 53 nS
Conductancia de drenaje-sustrato (Cd): 660 pF
Resistencia entre drenaje y fuente RDS(on): 0.042 Ohm
Paquete / Cubierta: TO-263AB
Búsqueda de reemplazo de MOSFET HUF75842S3ST
HUF75842S3ST Datasheet (PDF)
huf75842s3s huf75842s3st.pdf
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huf75842p3.pdf
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huf75852g3.pdf
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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