HUF76439S3ST Todos los transistores

 

HUF76439S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF76439S3ST

Código: 76439S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 70 nC

Tiempo de elevación (tr): 125 nS

Conductancia de drenaje-sustrato (Cd): 840 pF

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TO-263AB

Búsqueda de reemplazo de MOSFET HUF76439S3ST

 

 

HUF76439S3ST Datasheet (PDF)

1.1. huf76439s3st.pdf Size:209K _update_mosfet

HUF76439S3ST
HUF76439S3ST

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance - rDS(ON) = 0.012Ω, VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014Ω, VGS = 5V DRAIN (FLANGE) GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical

1.2. huf76439s3s.pdf Size:210K _fairchild_semi

HUF76439S3ST
HUF76439S3ST

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012?, VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014?, VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models SOURCE

 3.1. huf76437s3st.pdf Size:215K _update_mosfet

HUF76439S3ST
HUF76439S3ST

HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014Ω, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017Ω, VGS = 5V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Ele

3.2. huf76432p3-s3s.pdf Size:221K _fairchild_semi

HUF76439S3ST
HUF76439S3ST

HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features • Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017Ω, VGS = 10V GATE - rDS(ON) = 0.019Ω, VGS = 5V GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ SOURCE Electr

Otros transistores... PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , IRF630 , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T .

Back to Top

 


HUF76439S3ST
  HUF76439S3ST
  HUF76439S3ST
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |

 

 

Back to Top