All MOSFET. HUF76439S3ST Datasheet

 

HUF76439S3ST Datasheet and Replacement


   Type Designator: HUF76439S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-263AB
 

 HUF76439S3ST substitution

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HUF76439S3ST Datasheet (PDF)

 ..1. Size:209K  fairchild semi
 huf76439s3st.pdf pdf_icon

HUF76439S3ST

HUF76439P3, HUF76439S3SData Sheet December 200171A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.014, VGS = 5VDRAIN (FLANGE)GATE Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical

 3.1. Size:210K  fairchild semi
 huf76439s3s.pdf pdf_icon

HUF76439S3ST

HUF76439P3, HUF76439S3SData Sheet December 200171A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance- rDS(ON) = 0.012, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.014, VGS = 5VDRAIN (FLANGE)GATE Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical

 7.1. Size:215K  fairchild semi
 huf76437s3st.pdf pdf_icon

HUF76439S3ST

HUF76437P3, HUF76437S3SData Sheet December 200164A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.017, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEle

 7.2. Size:221K  fairchild semi
 huf76432p3-s3s.pdf pdf_icon

HUF76439S3ST

HUF76432P3, HUF76432S3SData Sheet December 200155A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE) - rDS(ON) = 0.017, VGS = 10VGATE- rDS(ON) = 0.019, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElectr

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Datasheet: HUF76013P3 , HUF76145S3 , HUF76407D3ST , HUF76419D3ST , HUF76419S3ST , HUF76429D3ST , HUF76429S3ST , HUF76437S3ST , 10N65 , HUF76445S3ST , HUF76609D3ST , HUF76619D3ST , HUF76629D3ST , HUF76633S3ST , HUFA75307D3 , HUFA75307D3S , HUFA75307D3ST .

History: FTK2N65P

Keywords - HUF76439S3ST MOSFET datasheet

 HUF76439S3ST cross reference
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 HUF76439S3ST replacement

 

 
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