HUF76633S3ST Todos los transistores

 

HUF76633S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF76633S3ST
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 145 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 415 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO-263AB

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HUF76633S3ST Datasheet (PDF)

 ..1. Size:216K  fairchild semi
huf76633s3st.pdf

HUF76633S3ST
HUF76633S3ST

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 6.1. Size:369K  fairchild semi
huf76633p3 f085.pdf

HUF76633S3ST
HUF76633S3ST

HUF76633P3_F085Data Sheet April 201238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.036, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Model

 6.2. Size:223K  fairchild semi
huf76633p3-s3s.pdf

HUF76633S3ST
HUF76633S3ST

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 6.3. Size:843K  cn vbsemi
huf76633p3.pdf

HUF76633S3ST
HUF76633S3ST

HUF76633P3www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

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History: FSL9110D

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