All MOSFET. HUF76633S3ST Datasheet

 

HUF76633S3ST Datasheet and Replacement


   Type Designator: HUF76633S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-263AB
 

 HUF76633S3ST substitution

   - MOSFET ⓘ Cross-Reference Search

 

HUF76633S3ST Datasheet (PDF)

 ..1. Size:216K  fairchild semi
 huf76633s3st.pdf pdf_icon

HUF76633S3ST

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 6.1. Size:369K  fairchild semi
 huf76633p3 f085.pdf pdf_icon

HUF76633S3ST

HUF76633P3_F085Data Sheet April 201238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.036, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Model

 6.2. Size:223K  fairchild semi
 huf76633p3-s3s.pdf pdf_icon

HUF76633S3ST

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 6.3. Size:843K  cn vbsemi
 huf76633p3.pdf pdf_icon

HUF76633S3ST

HUF76633P3www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

SHOW MORE

Datasheet: HUF76429D3ST , HUF76429S3ST , HUF76437S3ST , HUF76439S3ST , HUF76445S3ST , HUF76609D3ST , HUF76619D3ST , HUF76629D3ST , 13N50 , HUFA75307D3 , HUFA75307D3S , HUFA75307D3ST , HUFA75307P3 , HUFA75309D3 , HUFA75309D3S , HUFA75309P3 , HUFA75309T3ST .

History: IRF7759L2TR1PBF | BLP04N10-B | RQA0008NXAQS | AM2394NE | HM3018JR | S-LNTK2575LT1G | QM6008P

Keywords - HUF76633S3ST MOSFET datasheet

 HUF76633S3ST cross reference
 HUF76633S3ST equivalent finder
 HUF76633S3ST lookup
 HUF76633S3ST substitution
 HUF76633S3ST replacement

 

 
Back to Top

 


 
.