HUFA75309D3S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA75309D3S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO-252AA

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HUFA75309D3S datasheet

 ..1. Size:215K  fairchild semi
 hufa75309d3 hufa75309d3s hufa75309p3.pdf pdf_icon

HUFA75309D3S

HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs 19A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 5.1. Size:171K  fairchild semi
 hufa75309t3st.pdf pdf_icon

HUFA75309D3S

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

 6.1. Size:174K  fairchild semi
 hufa75307t3st.pdf pdf_icon

HUFA75309D3S

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC

 6.2. Size:215K  fairchild semi
 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf pdf_icon

HUFA75309D3S

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

MOSTRAR MÁS

Otros transistores... HUF76619D3ST, HUF76629D3ST, HUF76633S3ST, HUFA75307D3, HUFA75307D3S, HUFA75307D3ST, HUFA75307P3, HUFA75309D3, IRF520, HUFA75309P3, HUFA75309T3ST, HUFA75321D3, HUFA75321D3ST, HUFA75321P3, HUFA75321S3S, HUFA75321S3ST, HUFA75329D3