HUFA75321S3S Todos los transistores

 

HUFA75321S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA75321S3S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: TO-263AB
 

 Búsqueda de reemplazo de HUFA75321S3S MOSFET

   - Selección ⓘ de transistores por parámetros

 

HUFA75321S3S Datasheet (PDF)

 ..1. Size:232K  fairchild semi
 hufa75321p3 hufa75321s3s hufa75321s3st.pdf pdf_icon

HUFA75321S3S

HUFA75321P3, HUFA75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves t

 5.1. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf pdf_icon

HUFA75321S3S

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 5.2. Size:224K  fairchild semi
 hufa75321d3 hufa75321d3st.pdf pdf_icon

HUFA75321S3S

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 6.1. Size:292K  fairchild semi
 hufa75329p3 hufa75329s3s.pdf pdf_icon

HUFA75321S3S

HUFA75329G3, HUFA75329P3, HUFA75329S3SData Sheet June 200249A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on th

MOSTRAR MÁS

Otros transistores... HUFA75307P3 , HUFA75309D3 , HUFA75309D3S , HUFA75309P3 , HUFA75309T3ST , HUFA75321D3 , HUFA75321D3ST , HUFA75321P3 , MMIS60R580P , HUFA75321S3ST , HUFA75329D3 , HUFA75329D3S , HUFA75329D3ST , HUFA75329P3 , HUFA75329S3S , HUFA75332G3 , HUFA75332S3S .

History: PHP27NQ11T | DMZ6005E | PHP29N08T | IXFT30N60X | STP19NB20FP | NP48N055NLE | FML13N60ES

 

 
Back to Top

 


 
.