HUFA75321S3S Specs and Replacement
Type Designator: HUFA75321S3S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO-263AB
HUFA75321S3S substitution
- MOSFET ⓘ Cross-Reference Search
HUFA75321S3S datasheet
hufa75321p3 hufa75321s3s hufa75321s3st.pdf
HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t... See More ⇒
hufa75321d3 hufa75321d3s.pdf
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves ... See More ⇒
hufa75321d3 hufa75321d3st.pdf
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves ... See More ⇒
hufa75329p3 hufa75329s3s.pdf
HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on th... See More ⇒
Detailed specifications: HUFA75307P3, HUFA75309D3, HUFA75309D3S, HUFA75309P3, HUFA75309T3ST, HUFA75321D3, HUFA75321D3ST, HUFA75321P3, P60NF06, HUFA75321S3ST, HUFA75329D3, HUFA75329D3S, HUFA75329D3ST, HUFA75329P3, HUFA75329S3S, HUFA75332G3, HUFA75332S3S
Keywords - HUFA75321S3S MOSFET specs
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