HUFA75321S3S Datasheet and Replacement
Type Designator: HUFA75321S3S
Marking Code: 75321S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 36 nC
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO-263AB
HUFA75321S3S substitution
HUFA75321S3S Datasheet (PDF)
hufa75321p3 hufa75321s3s hufa75321s3st.pdf
HUFA75321P3, HUFA75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves t
hufa75321d3 hufa75321d3s.pdf
HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves
hufa75321d3 hufa75321d3st.pdf
HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves
hufa75329p3 hufa75329s3s.pdf
HUFA75329G3, HUFA75329P3, HUFA75329S3SData Sheet June 200249A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on th
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