HUFA75337S3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA75337S3ST

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 175 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 625 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO-263AB

 Búsqueda de reemplazo de HUFA75337S3ST MOSFET

- Selecciónⓘ de transistores por parámetros

 

HUFA75337S3ST datasheet

 ..1. Size:223K  fairchild semi
 hufa75337g3 hufa75337p3 hufa75337s3s hufa75337s3st.pdf pdf_icon

HUFA75337S3ST

HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 6.1. Size:233K  fairchild semi
 hufa75333p3 hufa75333s3s hufa75333s3st.pdf pdf_icon

HUFA75337S3ST

HUFA75333G3, HUFA75333P3, HUFA75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 6.2. Size:268K  fairchild semi
 hufa75332g3 hufa75332s3s.pdf pdf_icon

HUFA75337S3ST

HUFA75332G3, HUFA75332P3, HUFA75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

 6.3. Size:226K  fairchild semi
 hufa75339g3 hufa75339s3s hufa75339s3st.pdf pdf_icon

HUFA75337S3ST

HUFA75339G3, HUFA75339P3, HUFA75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

MOSTRAR MÁS

Otros transistores... HUFA75332G3, HUFA75332S3S, HUFA75333P3, HUFA75333S3S, HUFA75333S3ST, HUFA75337G3, HUFA75337P3, HUFA75337S3S, EMB04N03H, HUFA75339G3, HUFA75339S3S, HUFA75339S3ST, HUFA75343G3, HUFA75343P3, HUFA75343S3S, HUFA75343S3ST, HUFA75345G3