HUFA75639S3ST Todos los transistores

 

HUFA75639S3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA75639S3ST
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-263AB
     - Selección de transistores por parámetros

 

HUFA75639S3ST Datasheet (PDF)

 ..1. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3st.pdf pdf_icon

HUFA75639S3ST

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

 2.1. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3s.pdf pdf_icon

HUFA75639S3ST

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

 6.1. Size:200K  fairchild semi
 hufa75637p3 hufa75637s3s hufa75637s3st.pdf pdf_icon

HUFA75639S3ST

HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a

 7.1. Size:196K  fairchild semi
 hufa75617d3s hufa75617d3st.pdf pdf_icon

HUFA75639S3ST

HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER

MOSTRAR MÁS

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: FS3KM-10 | WFY3N02 | APT904R2AN | HMS21N65 | SVF7N60CF | IRF7309IPBF | STL60NH3LL

 

 
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