All MOSFET. HUFA75639S3ST Datasheet

 

HUFA75639S3ST Datasheet and Replacement


   Type Designator: HUFA75639S3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-263AB
 

 HUFA75639S3ST substitution

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HUFA75639S3ST Datasheet (PDF)

 ..1. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3st.pdf pdf_icon

HUFA75639S3ST

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

 2.1. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3s.pdf pdf_icon

HUFA75639S3ST

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

 6.1. Size:200K  fairchild semi
 hufa75637p3 hufa75637s3s hufa75637s3st.pdf pdf_icon

HUFA75639S3ST

HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a

 7.1. Size:196K  fairchild semi
 hufa75617d3s hufa75617d3st.pdf pdf_icon

HUFA75639S3ST

HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER

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Datasheet: HUFA75617D3S , HUFA75617D3ST , HUFA75623S3ST , HUFA75637P3 , HUFA75637S3S , HUFA75637S3ST , HUFA75639G3 , HUFA75639P3 , 10N60 , HUFA75645P3 , HUFA75652G3 , HUFA75823D3S , HUFA75823D3ST , HUFA75829D3S , HUFA75829D3ST , HUFA75842P3 , HUFA75842S3S .

History: OSG60R2K2DSF | 2SJ608 | SI1410EDH | DAMH300N150 | NTLLD4901NF | OSG60R180IF | AOB2606L

Keywords - HUFA75639S3ST MOSFET datasheet

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