HUFA76407D3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76407D3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm

Encapsulados: TO-251AA

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HUFA76407D3 datasheet

 ..1. Size:150K  fairchild semi
 hufa76407d3st hufa76407d3 hufa76407d3s.pdf pdf_icon

HUFA76407D3

HUFA76407D3, HUFA76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE SOURCE Simulation Models - Temperature Compensated PSPICE a

 4.1. Size:543K  fairchild semi
 hufa76407dk8t f085.pdf pdf_icon

HUFA76407D3

HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging JEDEC MS-012AA Ultra Low On-Resistance - rDS(ON) = 0.090 , VGS = 10V BRANDING DASH - rDS(ON) = 0.105 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models - SPICE and SABER Thermal Impedance

 4.2. Size:263K  fairchild semi
 hufa76407dk8t.pdf pdf_icon

HUFA76407D3

HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090 , VGS = 10V - rDS(ON) = 0.105 , VGS = 5V Simulation Models 5 - Temperature Compensated PSPICE and SABER Electrical Models 1 2 - SPICE and SABER Thermal Impedan

 5.1. Size:208K  fairchild semi
 hufa76407p3.pdf pdf_icon

HUFA76407D3

HUFA76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.092 , VGS = 10V GATE - rDS(ON) = 0.107 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance M

MOSTRAR MÁS

Otros transistores... HUFA75823D3S, HUFA75823D3ST, HUFA75829D3S, HUFA75829D3ST, HUFA75842P3, HUFA75842S3S, HUFA75842S3ST, HUFA75852G3, IRFP250N, HUFA76407D3S, HUFA76407D3ST, HUFA76407P3, HUFA76409D3, HUFA76409P3, HUFA76413D3, HUFA76413D3S, HUFA76413P3