HUFA76409D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUFA76409D3
   Código: 76409D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 89 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
   Paquete / Cubierta: TO-251AA

Búsqueda de reemplazo de MOSFET HUFA76409D3

HUFA76409D3 Datasheet (PDF)

..1. Size:202K fairchild semi
hufa76409d3.pdf

HUFA76409D3, HUFA76409D3STData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER

0.1. Size:839K fairchild semi
hufa76409d3st.pdf

5.1. Size:206K fairchild semi
hufa76409p3.pdf

HUFA76409P3Data Sheet December 200117A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.062, VGS = 10VGATE- rDS(ON) = 0.070, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance

6.1. Size:150K fairchild semi
hufa76407d3st hufa76407d3 hufa76407d3s.pdf

HUFA76407D3, HUFA76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATESOURCE Simulation Models- Temperature Compensated PSPICE a

6.2. Size:543K fairchild semi
hufa76407dk8t f085.pdf

HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance

6.3. Size:208K fairchild semi
hufa76407p3.pdf

HUFA76407P3Data Sheet December 200112A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN - rDS(ON) = 0.092, VGS = 10VGATE- rDS(ON) = 0.107, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance M

6.4. Size:263K fairchild semi
hufa76407dk8t.pdf

HUFA76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedan

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