HUFA76409D3
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUFA76409D3
Marking Code: 76409D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 49
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 89
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.063
Ohm
Package:
TO-251AA
HUFA76409D3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUFA76409D3
Datasheet (PDF)
..1. Size:202K fairchild semi
hufa76409d3.pdf 
HUFA76409D3, HUFA76409D3STData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER
0.1. Size:839K fairchild semi
hufa76409d3st.pdf
HUFA76409D3, HUFA76409D3STData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER
5.1. Size:206K fairchild semi
hufa76409p3.pdf
HUFA76409P3Data Sheet December 200117A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN- rDS(ON) = 0.062, VGS = 10VGATE- rDS(ON) = 0.070, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance
6.1. Size:150K fairchild semi
hufa76407d3st hufa76407d3 hufa76407d3s.pdf
HUFA76407D3, HUFA76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATESOURCE Simulation Models- Temperature Compensated PSPICE a
6.2. Size:543K fairchild semi
hufa76407dk8t f085.pdf
HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance
6.3. Size:208K fairchild semi
hufa76407p3.pdf
HUFA76407P3Data Sheet December 200112A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN - rDS(ON) = 0.092, VGS = 10VGATE- rDS(ON) = 0.107, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance M
6.4. Size:263K fairchild semi
hufa76407dk8t.pdf
HUFA76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedan
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