HUFA76409P3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76409P3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 49 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 89 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.062 Ohm

Encapsulados: TO-220AB

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HUFA76409P3 datasheet

 ..1. Size:206K  fairchild semi
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HUFA76409P3

HUFA76409P3 Data Sheet December 2001 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB Features Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.062 , VGS = 10V GATE - rDS(ON) = 0.070 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and SABER Thermal Impedance

 5.1. Size:839K  fairchild semi
hufa76409d3st.pdf pdf_icon

HUFA76409P3

HUFA76409D3, HUFA76409D3ST Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER

 5.2. Size:202K  fairchild semi
hufa76409d3.pdf pdf_icon

HUFA76409P3

HUFA76409D3, HUFA76409D3ST Data Sheet December 2001 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.071 , VGS = 5V DRAIN GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER

 6.1. Size:150K  fairchild semi
hufa76407d3st hufa76407d3 hufa76407d3s.pdf pdf_icon

HUFA76409P3

HUFA76407D3, HUFA76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE SOURCE Simulation Models - Temperature Compensated PSPICE a

Otros transistores... HUFA75842S3S, HUFA75842S3ST, HUFA75852G3, HUFA76407D3, HUFA76407D3S, HUFA76407D3ST, HUFA76407P3, HUFA76409D3, STP75NF75, HUFA76413D3, HUFA76413D3S, HUFA76413P3, HUFA76419D3, HUFA76419P3, HUFA76419S3S, HUFA76419S3ST, HUFA76423D3S