HUFA76413D3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUFA76413D3S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 172 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
Paquete / Cubierta: TO-252AA
- Selección de transistores por parámetros
HUFA76413D3S Datasheet (PDF)
hufa76413d3 hufa76413d3s.pdf

HUFA76413D3, HUFA76413D3SData Sheet December 200120A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN DRAINSOURCE- rDS(ON) = 0.049, VGS = 10V (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.056, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE a
hufa76413dk8t f085.pdf

October 2010HUFA76413DK8T_F085N-Channel Logic Level UltraFET Power MOSFET60V, 4.8A, 56mGeneral DescriptionThese N-Channel power MOSFETs are manufactured us-Applicationsing the innovative UltraFET process. This advanced pro- Motor and Load Controlcess technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor- Powertr
hufa76413p3.pdf

HUFA76413P3Data Sheet December 200122A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeaturesSOURCE Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.049, VGS = 10VGATE- rDS(ON) = 0.056, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice and SABER Thermal
hufa76419d3s.pdf

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: TPCA8006-H | 2SK630 | SIHFR9020 | PE528BA | PHD55N03LTA | 2SK3588-01SJ | PHP11N50E
History: TPCA8006-H | 2SK630 | SIHFR9020 | PE528BA | PHD55N03LTA | 2SK3588-01SJ | PHP11N50E



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