HUFA76423D3S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76423D3S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 145 nS

Cossⓘ - Capacitancia de salida: 315 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO-252AA

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HUFA76423D3S datasheet

 ..1. Size:199K  fairchild semi
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HUFA76423D3S

HUFA76423D3, HUFA76423D3S Data Sheet December 2001 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.032 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.037 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER

 5.1. Size:240K  fairchild semi
hufa76423p3 hufa76423s3s hufa76423s3st.pdf pdf_icon

HUFA76423D3S

HUFA76423P3, HUFA76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.030 , VGS = 10V GATE - rDS(ON) = 0.035 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Ele

 6.1. Size:229K  fairchild semi
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HUFA76423D3S

HUFA76429D3, HUFA76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023 , VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 6.2. Size:206K  fairchild semi
hufa76429p3 hufa76429s3s hufa76429s3st.pdf pdf_icon

HUFA76423D3S

HUFA76429P3, HUFA76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.022 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE E

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