HUFA76639P3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA76639P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 207 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO-220AB

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HUFA76639P3 datasheet

 ..1. Size:217K  fairchild semi
 hufa76639p3 hufa76639s3s hufa76639s3st.pdf pdf_icon

HUFA76639P3

HUFA76639P3, HUFA76639S3S Data Sheet January 2002 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.026 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.027 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 6.1. Size:217K  fairchild semi
 hufa76633p3 hufa76633s3s hufa76633s3st.pdf pdf_icon

HUFA76639P3

HUFA76633P3, HUFA76633S3S Data Sheet January 2002 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

 7.1. Size:217K  fairchild semi
 hufa76645p3 hufa76645s3s hufa76645s3st.pdf pdf_icon

HUFA76639P3

HUFA76645P3, HUFA76645S3S Data Sheet January 2002 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.015 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER Electrical

 7.2. Size:302K  fairchild semi
 hufa76645s3st f085.pdf pdf_icon

HUFA76639P3

HUFA76645S3ST_F085 Data Sheet September 2010 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features Ultra Low On-Resistance JEDEC TO-263AB - rDS(ON) = 0.014 , VGS = 10V - rDS(ON) = 0.015 , VGS = 5V DRAIN Simulation Models (FLANGE) - Temperature Compensated PSPICE and SABER Electrical Models GATE - Spice and SABER Thermal Imped

MOSTRAR MÁS

Otros transistores... HUFA76619D3, HUFA76619D3S, HUFA76619D3ST, HUFA76629D3, HUFA76629D3ST, HUFA76633P3, HUFA76633S3S, HUFA76633S3ST, 2N60, HUFA76639S3S, HUFA76639S3ST, HUFA76645P3, HUFA76645S3S, HUFA76645S3ST, VTI634, WFD1N60, WFD20N06