All MOSFET. HUFA76639P3 Datasheet

 

HUFA76639P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUFA76639P3
   Marking Code: 76639P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 180 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 16 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 51 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 71 nC
   Rise Time (tr): 207 nS
   Drain-Source Capacitance (Cd): 520 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
   Package: TO-220AB

 HUFA76639P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA76639P3 Datasheet (PDF)

 ..1. Size:217K  fairchild semi
hufa76639p3 hufa76639s3s hufa76639s3st.pdf

HUFA76639P3
HUFA76639P3

HUFA76639P3, HUFA76639S3SData Sheet January 200250A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 6.1. Size:217K  fairchild semi
hufa76633p3 hufa76633s3s hufa76633s3st.pdf

HUFA76639P3
HUFA76639P3

HUFA76633P3, HUFA76633S3SData Sheet January 200238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 7.1. Size:217K  fairchild semi
hufa76645p3 hufa76645s3s hufa76645s3st.pdf

HUFA76639P3
HUFA76639P3

HUFA76645P3, HUFA76645S3SData Sheet January 200275A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.015, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER Electrical

 7.2. Size:302K  fairchild semi
hufa76645s3st f085.pdf

HUFA76639P3
HUFA76639P3

HUFA76645S3ST_F085Data Sheet September 201075A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeatures Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10V- rDS(ON) = 0.015, VGS = 5VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABER Electrical ModelsGATE- Spice and SABER Thermal Imped

 7.3. Size:214K  fairchild semi
hufa76619d3st hufa76619d3 hufa76619d3s.pdf

HUFA76639P3
HUFA76639P3

HUFA76619D3, HUFA76619D3SData Sheet January 200218A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.085, VGS = 10VDRAINGATE- rDS(ON) = 0.087, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE

 7.4. Size:202K  fairchild semi
hufa76629d3 hufa76629d3st.pdf

HUFA76639P3
HUFA76639P3

HUFA76629D3, HUFA76629D3SData Sheet January 200220A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINSOURCE (FLANGE) - rDS(ON) = 0.052, VGS = 10VDRAIN- rDS(ON) = 0.054, VGS = 5VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Elect

 7.5. Size:208K  fairchild semi
hufa76609d3st hufa76609d3 hufa76609d3s.pdf

HUFA76639P3
HUFA76639P3

HUFA76609D3, HUFA76609D3SData Sheet January 200210A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceDRAIN DRAIN- rDS(ON) = 0.160, VGS = 10VSOURCE (FLANGE) (FLANGE)DRAINGATE - rDS(ON) = 0.165, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER

 7.6. Size:828K  cn vbsemi
hufa76609d3.pdf

HUFA76639P3
HUFA76639P3

HUFA76609D3www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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