WFD2N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFD2N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-252

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WFD2N60 datasheet

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 wfd2n60.pdf pdf_icon

WFD2N60

WFD2N60 WFD2N60 WFD2N60 WFD2N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,600V,R (Max 5.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 15.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced us

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 wfd2n60b.pdf pdf_icon

WFD2N60

WFD2N60B WFD2N60B WFD2N60B WFD2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,600V,R (Max 5.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u

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 wfd2n65l.pdf pdf_icon

WFD2N60

WFD2N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 2.0A,650V,R (Max5.0 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced

Otros transistores... HUFA76639S3S, HUFA76639S3ST, HUFA76645P3, HUFA76645S3S, HUFA76645S3ST, VTI634, WFD1N60, WFD20N06, IRFZ48N, WFD2N60B, WFD4N60, WFD4N60B, WFD5N50, WFD5N60B, WFD5N60C, WFD830, WFD830B