All MOSFET. WFD2N60 Datasheet

 

WFD2N60 Datasheet and Replacement


   Type Designator: WFD2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-252
 

 WFD2N60 substitution

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WFD2N60 Datasheet (PDF)

 ..1. Size:495K  winsemi
 wfd2n60.pdf pdf_icon

WFD2N60

WFD2N60WFD2N60WFD2N60WFD2N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V,R (Max 5.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 15.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced us

 0.1. Size:586K  winsemi
 wfd2n60b.pdf pdf_icon

WFD2N60

WFD2N60BWFD2N60BWFD2N60BWFD2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V,R (Max 5.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

 8.1. Size:255K  winsemi
 wfd2n65l.pdf pdf_icon

WFD2N60

WFD2N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD2.0A,650V,R (Max5.0)@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced

Datasheet: HUFA76639S3S , HUFA76639S3ST , HUFA76645P3 , HUFA76645S3S , HUFA76645S3ST , VTI634 , WFD1N60 , WFD20N06 , RU7088R , WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , WFD5N60C , WFD830 , WFD830B .

Keywords - WFD2N60 MOSFET datasheet

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