WFD5N60B Todos los transistores

 

WFD5N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WFD5N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO-252
 

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WFD5N60B Datasheet (PDF)

 ..1. Size:487K  winsemi
 wfd5n60b.pdf pdf_icon

WFD5N60B

WFD5N60BWFD5N60BWFD5N60BWFD5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 7.1. Size:485K  winsemi
 wfd5n60c.pdf pdf_icon

WFD5N60B

WFD5N60CWFD5N60CWFD5N60CWFD5N60CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 8.1. Size:255K  winsemi
 wfd5n65l.pdf pdf_icon

WFD5N60B

WFD5N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD5.0A,650V,R (Max2.7)@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced

 8.2. Size:262K  inchange semiconductor
 wfd5n65l.pdf pdf_icon

WFD5N60B

Isc N-Channel MOSFET Transistor WFD5N65LFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

MOSTRAR MÁS

Otros transistores... VTI634 , WFD1N60 , WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , 8N60 , WFD5N60C , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S .

History: STL80N3LLH6 | BUK962R8-30B

 

 
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