WFD5N60C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFD5N60C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-252

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WFD5N60C datasheet

 ..1. Size:485K  winsemi
 wfd5n60c.pdf pdf_icon

WFD5N60C

WFD5N60C WFD5N60C WFD5N60C WFD5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 7.1. Size:487K  winsemi
 wfd5n60b.pdf pdf_icon

WFD5N60C

WFD5N60B WFD5N60B WFD5N60B WFD5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 8.1. Size:255K  winsemi
 wfd5n65l.pdf pdf_icon

WFD5N60C

WFD5N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 5.0A,650V,R (Max2.7 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced

 8.2. Size:262K  inchange semiconductor
 wfd5n65l.pdf pdf_icon

WFD5N60C

Isc N-Channel MOSFET Transistor WFD5N65L FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

MOSTRAR MÁS

Otros transistores... WFD1N60, WFD20N06, WFD2N60, WFD2N60B, WFD4N60, WFD4N60B, WFD5N50, WFD5N60B, AON7403, WFD830, WFD830B, WFF10N60, WFF10N65, WFF12N60, WFF12N65, WFF12N70S, WFF13N50