WFD5N60C - Даташиты. Аналоги. Основные параметры
Наименование производителя: WFD5N60C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 62 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO-252
Аналог (замена) для WFD5N60C
WFD5N60C Datasheet (PDF)
wfd5n60c.pdf
WFD5N60CWFD5N60CWFD5N60CWFD5N60CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced
wfd5n60b.pdf
WFD5N60BWFD5N60BWFD5N60BWFD5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced
wfd5n65l.pdf
WFD5N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD5.0A,650V,R (Max2.7)@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced
wfd5n65l.pdf
Isc N-Channel MOSFET Transistor WFD5N65LFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Другие MOSFET... WFD1N60 , WFD20N06 , WFD2N60 , WFD2N60B , WFD4N60 , WFD4N60B , WFD5N50 , WFD5N60B , AON7403 , WFD830 , WFD830B , WFF10N60 , WFF10N65 , WFF12N60 , WFF12N65 , WFF12N70S , WFF13N50 .
History: WST2314 | AP6P03SI | MTEB6N20J3 | WST2307 | ME70N10T | JMSL0406PG | ME7306-G
History: WST2314 | AP6P03SI | MTEB6N20J3 | WST2307 | ME70N10T | JMSL0406PG | ME7306-G
Список транзисторов
Обновления
MOSFET: AGM40P75D | AGM40P75A | AGM40P65E | AGM40P65AP | AGM40P55D | AGM40P55AP | AGM40P55A | AGM40P35D | AGM40P35AP | AGM40P35A-KU | AGM40P35A | AGM40P30D | AGM40P30AP | AGM40P30A | AGM60P20R | AGM60P20D
Popular searches
2sc1312 | bf495 transistor equivalent | 2sc1313 | 2sb560 replacement | 2sd330 replacement | a1273 transistor | 2sc1384 equivalent | 2sd786




