PMBFJ177 Todos los transistores

 

PMBFJ177 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMBFJ177
   Tipo de FET: JFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de PMBFJ177 MOSFET

   - Selección ⓘ de transistores por parámetros

 

PMBFJ177 Datasheet (PDF)

 ..1. Size:31K  philips
 pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf pdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

 ..2. Size:57K  nxp
 pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf pdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 7.1. Size:228K  philips
 pmbfj174 pmbf175 pmbf176 pmbf177.pdf pdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 8.1. Size:32K  philips
 pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf pdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

MOSTRAR MÁS

Otros transistores... PJX8804 , PJX8805 , PJX8806 , PJZ6NA90 , PJZ9NA90 , PMBFJ174 , PMBFJ175 , PMBFJ176 , IRF9640 , PMBFJ620 , PMC85XP , PMCM4401VNE , PMCM4401VPE , PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 .

History: KI2304DS | HSU80N03

 

 
Back to Top

 


 
.