PMBFJ177 Todos los transistores

 

PMBFJ177 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMBFJ177
   Código: p6Y
   Tipo de FET: JFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 5 V
   trⓘ - Tiempo de subida: 25 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET PMBFJ177

 

PMBFJ177 Datasheet (PDF)

 ..1. Size:31K  philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

PMBFJ177
PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

 ..2. Size:57K  nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf

PMBFJ177
PMBFJ177

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 7.1. Size:228K  philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdf

PMBFJ177
PMBFJ177

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 8.1. Size:32K  philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf

PMBFJ177
PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

 8.2. Size:47K  philips
pmbfj111 pmbfj112 pmbfj113.pdf

PMBFJ177
PMBFJ177

PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 8.3. Size:32K  philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf

PMBFJ177
PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

 8.4. Size:46K  philips
pmbfj108 pmbfj109 pmbfj110.pdf

PMBFJ177
PMBFJ177

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


PMBFJ177
  PMBFJ177
  PMBFJ177
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100

 

 

 
Back to Top