Справочник MOSFET. PMBFJ177

 

PMBFJ177 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMBFJ177
   Тип транзистора: JFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.02 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 300 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для PMBFJ177

   - подбор ⓘ MOSFET транзистора по параметрам

 

PMBFJ177 Datasheet (PDF)

 ..1. Size:31K  philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdfpdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

 ..2. Size:57K  nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdfpdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 7.1. Size:228K  philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdfpdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 8.1. Size:32K  philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdfpdf_icon

PMBFJ177

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

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History: AP4563GM | OSG60R092HT3ZF | APT40M70B2VFRG | 3SK259 | IXFV26N50P | RQ6E050AT | 2SK3365

 

 
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