PMCM440VNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMCM440VNE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.067 Ohm
Paquete / Cubierta: WLCSP4
Búsqueda de reemplazo de PMCM440VNE MOSFET
PMCM440VNE Datasheet (PDF)
pmcm440vne.pdf

PMCM440VNE12 V, N-channel Trench MOSFET7 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc
pmcm4401vne.pdf

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc
pmcm4401vpe.pdf

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis
pmcm4401une.pdf

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha
Otros transistores... PMBFJ174 , PMBFJ175 , PMBFJ176 , PMBFJ177 , PMBFJ620 , PMC85XP , PMCM4401VNE , PMCM4401VPE , AO3407 , PMCM6501VPE , PMCM650VNE , WFF2N65 , WFF2N65B , WFF4N60 , WFF5N60 , WFF5N60B , WFF5N60C .
History: TK65S04N1L | SIS407DN | SIS435DNT | CCS5Y3315CM | WSTBSS138 | SIS434DN | STT468A
History: TK65S04N1L | SIS407DN | SIS435DNT | CCS5Y3315CM | WSTBSS138 | SIS434DN | STT468A



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