PMCM440VNE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMCM440VNE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.067 Ohm

Encapsulados: WLCSP4

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PMCM440VNE datasheet

 ..1. Size:317K  nxp
 pmcm440vne.pdf pdf_icon

PMCM440VNE

PMCM440VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.1. Size:318K  nxp
 pmcm4401vne.pdf pdf_icon

PMCM440VNE

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 7.2. Size:317K  nxp
 pmcm4401vpe.pdf pdf_icon

PMCM440VNE

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

 7.3. Size:263K  nxp
 pmcm4401une.pdf pdf_icon

PMCM440VNE

PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

MOSTRAR MÁS

Otros transistores... PMBFJ174, PMBFJ175, PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE, PMCM4401VPE, AO4407A, PMCM6501VPE, PMCM650VNE, WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, WFF5N60C