PMCM440VNE
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMCM440VNE
Marking Code: M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 3.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.5
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067
Ohm
Package: WLCSP4
PMCM440VNE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMCM440VNE
Datasheet (PDF)
..1. Size:317K nxp
pmcm440vne.pdf
PMCM440VNE12 V, N-channel Trench MOSFET7 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc
7.1. Size:318K nxp
pmcm4401vne.pdf
PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc
7.2. Size:317K nxp
pmcm4401vpe.pdf
PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis
7.3. Size:263K nxp
pmcm4401une.pdf
PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha
7.4. Size:715K nxp
pmcm4401upe.pdf
PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D
7.5. Size:258K nxp
pmcm4402upe.pdf
PMCM4402UPE20 V, P-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Dischar
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