WFF8N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFF8N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO-220F

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WFF8N60 datasheet

 ..1. Size:696K  winsemi
 wff8n60.pdf pdf_icon

WFF8N60

WFF8N60 WFF8N60 WFF8N60 WFF8N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Desc

 0.1. Size:709K  winsemi
 wff8n60b.pdf pdf_icon

WFF8N60

WFF8N60B WFF8N60B WFF8N60B WFF8N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,600V,R (Max1.2 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General

 8.1. Size:215K  winsemi
 wff8n65l.pdf pdf_icon

WFF8N60

WFF8N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 8.0A,650V,R (Max1.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14.5nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produce

 8.2. Size:695K  winsemi
 wff8n65b.pdf pdf_icon

WFF8N60

WFF8N65B WFF8N65B WFF8N65B WFF8N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7.5A,650V,R (Max1.3 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General

MOSTRAR MÁS

Otros transistores... WFF640, WFF730, WFF740, WFF7N60, WFF7N65S, WFF830, WFF840, WFF840B, AO3400, WFF8N60B, WFF8N65B, WFF9N50, WFF9N90, WFJ5N65B, WFJ8N65B, WFN1N60, WFN1N60N