WFP12N65S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFP12N65S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO-220

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WFP12N65S datasheet

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 wfp12n65s.pdf pdf_icon

WFP12N65S

WFP12N65S Super-junction N-Channel Power MOSFET Features 12A,650V,R (Max0.30 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 84.4nC) High EAS energy 100%Avalanche Tested RoHS Compliant Maximum Junction Temperature Range(150 ) General Description This Super-junction Power MOSFET is produced using Winsemi's employs a deep trench filling process t

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WFP12N65S

WFP12N65 WFP12N65 WFP12N65 WFP12N65 Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.78 )@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Po wer MOS FE T is pro du ced usi ng Win se mi s adva nce d planar stripe, VDMOS technology. This late

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 wfp12n60.pdf pdf_icon

WFP12N65S

WFP12N60 WFP12N60 WFP12N60 WFP12N60 Silicon N-Channel MOSFET Features 12A, 600V,R (Max 0.65 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe, DMOS technology. This latest tech

Otros transistores... WFJ5N65B, WFJ8N65B, WFN1N60, WFN1N60N, WFP10N60, WFP10N65, WFP12N60, WFP12N65, AON7408, WFP13N50, WFP18N20, WFP18N50, WFP2N60, WFP2N60B, WFP3205, WFP3205T, WFP4N60