WFP12N65S Specs and Replacement
Type Designator: WFP12N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220
WFP12N65S substitution
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WFP12N65S datasheet
wfp12n65s.pdf
WFP12N65S Super-junction N-Channel Power MOSFET Features 12A,650V,R (Max0.30 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 84.4nC) High EAS energy 100%Avalanche Tested RoHS Compliant Maximum Junction Temperature Range(150 ) General Description This Super-junction Power MOSFET is produced using Winsemi's employs a deep trench filling process t... See More ⇒
wfp12n65.pdf
WFP12N65 WFP12N65 WFP12N65 WFP12N65 Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.78 )@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Po wer MOS FE T is pro du ced usi ng Win se mi s adva nce d planar stripe, VDMOS technology. This late... See More ⇒
wfp12n60.pdf
WFP12N60 WFP12N60 WFP12N60 WFP12N60 Silicon N-Channel MOSFET Features 12A, 600V,R (Max 0.65 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe, DMOS technology. This latest tech... See More ⇒
Detailed specifications: WFJ5N65B, WFJ8N65B, WFN1N60, WFN1N60N, WFP10N60, WFP10N65, WFP12N60, WFP12N65, AON7408, WFP13N50, WFP18N20, WFP18N50, WFP2N60, WFP2N60B, WFP3205, WFP3205T, WFP4N60
Keywords - WFP12N65S MOSFET specs
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