All MOSFET. WFP12N65S Datasheet

 

WFP12N65S Datasheet and Replacement


   Type Designator: WFP12N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220
 

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WFP12N65S Datasheet (PDF)

 ..1. Size:266K  winsemi
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WFP12N65S

WFP12N65SSuper-junction N-Channel Power MOSFET Features 12A,650V,R (Max0.30)@V =10VDS(on) GS Ultra-low Gate charge(Typical 84.4nC) High EAS energy 100%Avalanche Tested RoHS Compliant Maximum Junction Temperature Range(150) General Description This Super-junction Power MOSFET is produced using Winsemi's employs a deep trench filling process t

 6.1. Size:380K  winsemi
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WFP12N65S

WFP12N65WFP12N65WFP12N65WFP12N65Silicon N-Channel MOSFETFeatures 12A,650V,RDS(on)(Max0.78)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Po wer MOS FE T is pro du ced usi ng Win se mi s adva nce dplanar stripe, VDMOS technology. This late

 7.1. Size:535K  winsemi
 wfp12n60.pdf pdf_icon

WFP12N65S

WFP12N60WFP12N60WFP12N60WFP12N60Silicon N-Channel MOSFETFeatures 12A, 600V,R (Max 0.65)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Winsemis advancedplanar stripe, DMOS technology. This latest tech

Datasheet: WFJ5N65B , WFJ8N65B , WFN1N60 , WFN1N60N , WFP10N60 , WFP10N65 , WFP12N60 , WFP12N65 , AON7408 , WFP13N50 , WFP18N20 , WFP18N50 , WFP2N60 , WFP2N60B , WFP3205 , WFP3205T , WFP4N60 .

History: STW40N65M2

Keywords - WFP12N65S MOSFET datasheet

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