WFP5N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WFP5N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220

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WFP5N60 datasheet

 ..1. Size:485K  winsemi
 wfp5n60.pdf pdf_icon

WFP5N60

WFP5N60 WFP5N60 WFP5N60 WFP5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi

 0.1. Size:527K  winsemi
 wfp5n60b.pdf pdf_icon

WFP5N60

WFP5N60B WFP5N60B WFP5N60B WFP5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced

 9.1. Size:519K  winsemi
 wfp5n80.pdf pdf_icon

WFP5N60

WFP5N80 WFP5N80 WFP5N80 WFP5N80 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,800V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi

 9.2. Size:762K  winsemi
 wfp5n50.pdf pdf_icon

WFP5N60

WFP5N50 WFP5N50 WFP5N50 WFP5N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5A,500V,RDS(on)(Max1.6 )@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MO SFET is pro du ced using Wi

MOSTRAR MÁS

Otros transistores... WFP2N60, WFP2N60B, WFP3205, WFP3205T, WFP4N60, WFP50N06, WFP50N06C, WFP5N50, SKD502T, WFP5N60B, WFP5N80, WFP630, WFP634, WFP640, WFP650, WFP70N06, WFP70N06T